A landmark study demonstrates fully industrialized fabrication of high-performance silicon quantum dots using 300mm semiconductor wafer processes, achieving impressive metrics including sub-2μeV charge noise, 1-second spin relaxation times, and 99% gate fidelities, while incorporating monolithic cobalt micromagnets, thus establishing a viable pathway for scaling quantum computing through existing semiconductor manufacturing infrastructure.

Lead halide perovskite quantum dots covered with stacked phenethylammonium ligands exhibit nearly non-blinking single photon emission with high purity (~98%) and extraordinary photostability (12+ hours), solving critical surface defect issues through π-π stacking interactions that create a stabilizing epitaxial ligand layer, enabling reliable room-temperature quantum emission for advanced computing and communication applications.

Quantum dots are normally made in industrial settings with high temperatures and toxic, expensive solvents — a process that is neither economical nor environmentally friendly. But researchers have now pulled off the process at the bench using water as a solvent, making a stable end-product at room temperature. Their work opens the door to making nanomaterials in a more sustainable way by demonstrating that protein sequences not derived from nature can be used to synthesize functional materials.

NIST researchers created atom-sized quantum dot grids to study electron behavior in controlled environments, observing wave-like properties in closely-spaced configurations and localized behavior in distant arrangements, with potential applications for quantum simulation and the development of exotic materials that exceed the modeling capabilities of conventional supercomputers.

Researchers demonstrated theoretical 2-qubit sweet spots in capacitively-coupled triple quantum dot spin qubits, presenting exact CPHASE and CNOT gate sequences with enhanced noise immunity for fault-tolerant quantum computing.

A team of researchers at University Grenoble Alpes and Centre of Excellence Quantum Technology has developed a single-quantum-dot heat valve. They have demonstrated gate control of electronic heat flow in a thermally biased single-quantum-dot junction.